Abstract
For submicron devices, carriers exhibit many nonthermal equilibrium effects. For GaAs devices, velocity overshoot and thermionic emission gate current are critical; for silicon devices, effects such as substrate and gate currents affect device reliability. Conventional (drift-diffusion) analysis such as obtained with PISCES or MINIMOS are inadequate. This paper presents a new multi-window analysis capability which allows Monte Carlo (MC) analysis in selected regions and under user (and program) control. This paper describes the program structure and demonstrates applicability in the analysis of 0.2 µm channel length MBE grown GaAs MESFET and 0.4 µm effective channel length Si MOSFET.
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