Multiwavelength fabrication of vertical-cavity surface-emitting lasers based on asymmetric one-dimensional photonic crystal

Abstract

A dual-wavelength vertical-cavity surface-emitting laser with an asymmetric one-dimensional photonic crystal structure was demonstrated based on the band-gap theory. The wavelengths of the VCSEL can be located at 979.7 and 943 nm with the aid of the Al0.8Ga0.2As defect layer. Particularly, the lasing of the dual-wavelength VCSEL was in the same light propagation direction for both the wavelengths with a high Q factor. Furthermore, the relative peaks position of the two wavelengths can be tuned from ∼33 to ∼50 nm by adjusting the refractive index contrast of the asymmetric photonic crystal structure, which will promote the formation of multidefect mode states.