Abstract
A strain-balanced, AlInAs/InGaAs/InP quantum cascade laser structure, designed for light emission near 9μm, was grown by molecular beam epitaxy. Laser devices were processed in buried heterostructure geometry. Maximum pulsed and continuous wave room temperature optical power of 4.5 and 2W and wallplug efficiency of 16% and 10%, respectively, were demonstrated for a 3mm by 10μm laser mounted epi-side down on an AlN/SiC composite submount. Pulsed laser characteristics were shown to be self-consistently described by a simple model based on rate equations using measured 70% injection efficiency for the upper laser level.
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