Abstract
We studied in details the interplay between various key elements required for multiwafer gas source molecular beam epitaxy (GSMBE) such as gas cell cracking efficiency, group-III and -V uniformity, pumping system capacity and pyrometer control of growth temperature. We demonstrate the compatibility of the accurate and reproducible control of Ga x In 1− x As y P 1− y alloys of GSMBE process with large-scale 1.55 μm telecom laser production. Excellent photoluminescence (PL) wavelength uniformity is obtained in 4×2 in configuration. Standard deviation of PL wavelength is smaller than 0.5 nm over the entire surface of the four wafers. Extension of multiwafer growth to heterostructures lasing at shorter wavelength is also discussed.
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