Abstract
In this paper we propose a review of the model called MVHR (Multi-Vibrational Hydrogen Release) dealing with Si-H bond physics and allowing explaining the complex physics of gate oxide breakdown. A large amount of effect as polarization, gate bias, temperature, and oxide thickness impacts are well explained by this physical model. In addition the model predicts some process related effects such as poly doping and oxide nitridation impact. The application of this model to high-K metal gate stack is discussed and a complete description of physical degradation in high-K stack is provided. A large amount of gate stack is studied as gate material (TiN, TaC, Poly), gate oxide (SiON, HfSiON, HfO2, HfZrO2). Hence the reliability limit of the SiON gate oxide will be predicted and guideline will be provided for metal gate dielectrics lifetime extrapolation.
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