Abstract
We analyze theoretically the impact of applied electric field F on multisubband electron mobility μ in Al 0.3 Ga 0.7 As/In 0.15 Ga 0.85 As double quantum well structures. We analyze μ by taking ionized impurity (II-), alloy disorder (AD-), and interface roughness (IR-) scatterings. It is observed that when F is applied either from the substrate (positive) or surface (negative) side of the structure, the mobility μ due to II- and AD- scatterings are symmetric as a function of F. However, μ due to IR- scattering is asymmetric and tilts the potential more towards the substrate side leading to more drop in μ in the case of the positive F as compared to the negative F. We also show that the reduction in the central barrier height improves μ by reducing the II- and IR- scatterings.
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