Abstract

All‐inorganic perovskites have attracted substantial interest due to their outstanding thermal stability. However, the device performance is still inferior to the typical organic–inorganic counterparts because of the unsatisfying phase stability and defects of the inorganic perovskite films. Herein, a multistrategy to optimize CsPbI2Br perovskite solar cells (PSCs) based on dopant‐free poly(3‐hexylthiophene) (P3HT) by applying thienylmethylamine acetate additive to enhance the α phase stability and passivate the bulk defects of CsPbI2Br perovskite is successfully demonstrated, followed by implementing BTCIC‐4Cl interlayer at CsPbI2Br/P3HT interface, which can coordinate with both perovskite and P3HT to suppress the surface defects and promote the hole transport. Benefitting from these, a champion power conversion efficiency (PCE) of 16.3% is achieved, and the unencapsulated optimized device can retain 97% of the initial PCE after aging under N2 atmosphere at 85 °C for 530 h. This work opens up a new era of multistrategy for improving performance and stability of CsPbI2Br PSCs based on dopant‐free hole transport layer.

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