Abstract
AbstractUsing the site-selective technique of combined excitation emission spectroscopy, we have studied a variety of Er doped silicon oxide layers with and without silicon nanocrystals. This technique allows clear distinction of cluster defect sites that are created during thermal annealing and become dominant for higher Er ion concentration and are suppressed by the presence of nanocrystals. In several samples, we were able to observe fluorescence line narrowing under resonant excitation allowing defect-selective excitation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
