Abstract
Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced.
Highlights
Redox-based resistive switching random access memories (ReRAMs) are considered as one of the most promising emerging non-volatile memory technologies[1,2,3]
Modular arithmetic is useful for reducing the complexity of standard arithmetic circuits[15,16] and is essential for building the residue numeral systems (RNS)
The current paper reports the first implementation of modular arithmetic using multi-state ReRAM devices, which is fully crossbar array compatible in conjunction with a selector device
Summary
Redox-based resistive switching random access memories (ReRAMs) are considered as one of the most promising emerging non-volatile memory technologies[1,2,3]. Due to abrupt switching events the common approach is to apply an external current compliance (CC) to enable multi-level resistance states[11]. The drawback of this approach is that the final resistance is defined by the CC, but not by the actual applied pulse amplitudes. We use optimized Pt/W/TaOx/Pt ReRAM devices, offering highly reliable stop-voltage behavior and use the corresponding multi-level properties to implement modular arithmetic operations, as discussed in the result section. The idea of secure and fault-tolerant data communication relies on the principles of public-key cryptography and error-correcting codes, respectively Both of these fields require efficient implementations of modular arithmetic. The RNS representation allows overflow-free addition, subtraction and multiplication, thereby enabling high degree of parallelism
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