Abstract
In this study, a nickel oxide (NiO)-based resistive random-access memory (RRAM) was demonstrated with multistate data storage. The NiO thin film was fabricated by solution procession combined with UV irradiation at a low temperature of 200 °C. The device exhibited a high on/off resistance ratio (>105), as well as good endurance and excellent retention characteristics. It is important that multistate data storage was obtained by adjusting the RESET stop voltage, which resulted in a multilevel cell (MLC) to increase storage density. Unintentionally doped carbon (C) was distributed in the NiO thin film with periodic fluctuation. C-related filaments formation and multistate rupture were suggested as the resistive switching mechanism.
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