Abstract
We investigated the effect of direct doping of quantum dots (QDs) with Si on the performance of QD solar cells (QDSCs). In order to control the Fermi level of intermediate band (IB) region, 25 layers of stacked InAs/GaNAs QDs were directly doped with Si impurity during the self-assembling stage of growth. A QDSC with Si doping shows an improved quantum efficiency (QE) in shorter wavelength region, which is from p-GaAs emitter layer. Further, the fact that applied external bias does not affect QE spectrum as well as photocurrent in QDSC with Si direct doping suggests that carrier collection has been enhanced in QD region as a result of reduction of recombination.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
