Multiscale three-dimensional CFD modeling for PECVD of amorphous silicon thin films

Abstract

The development of a three-dimensional, multiscale computational fluid dynamics (CFD) model is presented here which aims to capture the deposition of amorphous silicon thin films via plasma-enhanced chemical vapor deposition (PECVD). The macroscopic reactor scale and the microscopic thin film growth domains which define the multiscale model are linked using a dynamic boundary which is updated at the completion of each time step. A novel parallel processing scheme built around a message passing interface (MPI) structure, in conjunction with a distributed collection of kinetic Monte Carlo algorithms, is applied in order to allow for transient simulations to be conducted using a mesh with greater than 1.5 million cells. Due to the frequent issue of thickness non-uniformity in thin film production, an improved PECVD reactor design is proposed. The resulting geometry is shown to reduce the product offset from ∼ 25 nm to less than 13 nm using identical deposition parameters.