Multiscale simulation of physical vapor deposition

Abstract

In this work, the whole process of physical vapor deposition, including the generation, migration and deposition of sputtering atoms, has been calculated and simulated. In order to verify the reliability of the simulation, the experiment and simulation are combined. In this paper, titanium was deposited on the surface of polypropylene plate. Raman scanning electron microscopy (SEM) and environmental controlled atomic force microscopy (EAFM) were used to characterize the surface morphology, elemental composition and surface roughness of titanized polypropylene. At the same time, the fractal dimension after wavelet analysis is used to describe the surface morphology and growth state of the film. The simulation results show that the sputtering target base distance, sputtering current and sputtering time have great influence on the film forming quality. The experimental results show that the target base distance is negatively correlated with the film formation thickness, while the sputtering current and sputtering time are positively correlated with the film formation thickness. The modified film has uniform surface thickness and smooth shape. This is consistent with the description of fractal theory after wavelet analysis.