Multiscale Dense U-Net: A Fast Correction Method for Thermal Drift Artifacts in Laboratory NanoCT Scans of Semi-Conductor Chips.

Abstract

The resolution of 3D structure reconstructed by laboratory nanoCT is often affected by changes in ambient temperature. Although correction methods based on projection alignment have been widely used, they are time-consuming and complex. Especially in piecewise samples (e.g., chips), the existing methods are semi-automatic because the projections lose attenuation information at some rotation angles. Herein, we propose a fast correction method that directly processes the reconstructed slices. Thus, the limitations of the existing methods are addressed. The method is named multiscale dense U-Net (MD-Unet), which is based on MIMO-Unet and achieves state-of-the-art artifacts correction performance in nanoCT. Experiments show that MD-Unet can significantly boost the correction performance (e.g., with three orders of magnitude improvement in correction speed compared with traditional methods), and MD-Unet+ improves 0.92 dB compared with MIMO-Unet in the chip dataset.