Abstract
Due to the continuous increase in data traffic, it is becoming imperative to develop communication systems capable of meeting the throughput requirements. Monolithic Opto-Electronic Integrated Circuits (OEICs) are ideal candidates to meet these demands. With that in mind, we propose a compact and computationally efficient model for Uni-Traveling Carrier Photodiodes (UTC-PDs) which are a key component of OEICs because of their high bandwidth and RF output power. The developed compact model is compatible with existing SPICE design software, enabling the design of beyond 5G and terahertz (THz) communication circuits and systems. By introducing detailed physical equations describing, in particular, the dark current, the intrinsic series resistance, and the junction capacitance, the model accurately captures the physical characteristics of the UTC-PD. The model parameter extraction follows a scalable extraction methodology derived from that of the bipolar and CMOS technologies. A detailed description of the de-embedding process is presented. Excellent agreement between the compact model and measurements has been achieved, showing model versatility across various technologies and scalability over several geometries.
Highlights
Data traffic is surging with the emergence of new applications such as virtual and augmented reality, autonomous driving, and Internet of Things (IoT) [1]
We propose a compact and computationally efficient model for Uni-Traveling Carrier Photodiodes (UTC-PDs) which are a key component of Opto-Electronic Integrated Circuits (OEICs) because of their high bandwidth and RF output power
The developed compact model is compatible with existing SPICE design software, enabling the design of beyond 5G and terahertz (THz) communication circuits and systems
Summary
Data traffic is surging with the emergence of new applications such as virtual and augmented reality, autonomous driving, and Internet of Things (IoT) [1]. The minimum required bandwidth for a highspeed communication system must reach several tens of GHz, which requires an even higher carrier frequency in the THz range (0.1–10 THz) To manage this data traffic, monolithic integration of Opto-Electronic Integrated Circuits (OEICs) (see Figure 1) is a viable solution and very promising among the new emerging THz technologies [2]. Sci. 2021, 11, 11088 same InP substrate and possibly base-collector epitaxial heterostructure, this combined modeling approach can pave the way for the design of monolithic integrated OEICs. In continuation of previous works, this study presents improvements of the first UTCPD compact model. On this schematic, the small signal electrical model is superimposed depicting different electrical elements of the equivalent circuit representation. On both sides of the mesa, there are the access lines, which are connected to the Ground-Signal-Ground (GSG) pads (Figure 2d)
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