Abstract
The synergies of glass-ceramic bonded SiC joint by He ion irradiation at 400 °C to the fluences of 2.5 × 1016, 1 × 1017 and 3 × 1017 ions/cm2 were investigated using a multiscale combination of atomic force microscopy (AFM), micro-Raman, grazing incidence X-ray diffraction, and transmission electron microscopy. The relative swelling difference between SiC and glass-ceramic reached 5.3 ± 0.6% irradiated to the fluence of 3 × 1017 ions/cm2. The main reason of swelling difference was the difference in irradiation-induced defects and He bubbles. Si-Si and C-C bonds formed in SiC substrate after irradiation were confirmed. Up to 3 × 1017 ions/cm2, crystalline phases in glass-ceramic were highly irradiation tolerant as they remained crystalline, but the irradiation-induced defects were significantly increased. Additionally, the size of He bubbles was larger in glass-ceramic compared to SiC. TEM visible extended defect formation such as dislocation loops were only detected in the larger phase grains, suggesting a potential influence of grain size on defect accumulation in glass-ceramic.
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