Abstract
Planar separate absorption, grading, charge, and multiplication (SAGCM) InP-InGaAs avalanche photodiodes (APD's) are ideal for studying the multiplication (photogain) versus bias voltage (M-V) characteristics. In this paper, the M-V characteristics-in SAGCM InP-InGaAs APD's are investigated both experimentally and theoretically. The self-calibrated nature of M and the bias-voltage independent quantum efficiency make it possible to compare theory and experiment accurately in an InP-based APD. The Miller empirical formula for Si and Ge is proved appropriate for the SAGCM InP-InGaAs APD's. Using a physics-based model, the M-V characteristics and its temperature dependence for all the SAGCM APD's with different device parameters is calculated theoretically, and the calculations are in good agreement to the experimental results. >
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