Multiple-Submicron Channel Array Gate-Recessed AlGaN/GaN Fin-MOSHEMTs

Abstract

In this paper, the multiple-submicron channel array gate-recessed AlGaN/GaN fin-metal-oxide-semiconductor high-electron mobility transistors (fin-MOSHEMTs) were fabricated using the photoelectrochemical oxidation method, the photoelectrochemical etching method, and the He-Cd laser interference photolithography method. The multiple-submicron channel array was formed using the He-Cd laser interference photolithography system. The gate-recessed structure and the directly grown gate oxide layer were performed using the photoelectrochemical etching method and the photoelectrochemical oxidation method, respectively. The subthreshold swing and the extrinsic transconductance were improved in the resulting devices with a narrower channel width. Furthermore, the unit gain cutoff frequency and the maximum oscillation frequency were also enhanced using a narrower channel width in the multiple-submicron channel array AlGaN/GaN fin-MOSHEMTs.