Abstract
We optimized the CH4 and H2 gas flow rate of chemical vapor deposition (CVD) graphene growth and obtained larger area, fewer-layered graphene grown on Cu foils. After transfering to SiO2 substrate by PMMA more than 3 times to repair the defect of monolayer graphene film, we synthesized large area, transparent and continuous graphene film. The morphology and structure were characterized by SEM and Raman spectroscopy. Analysis of electrical properties and optical properties show that we obtained low resistance and high transparency of ~90%, which could be used on photoelectric device as solar cell and acceptable for replacing commercial ITO electrodes.
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