Abstract
We have measured the Shubnikov–de Haas (SdH) effect in δ-doped AlAs0.56Sb0.44/In0.53Ga0.47As heterostructures and observed a population of the second subband. Using the persistent photoconductivity effect we increased the electron density from 26.73 to 28.20×1011 cm−2 in the first subband and 6.61 to 7.20×1011 cm−2 in the second. The onset of the second subband population occurs when the first subband is filled to a density of 11.56×1011 cm−2. From the nonparabolic band approximation we calculated the effective masses in both subbands before illumination. The effective mass for the second subband was evaluated using the temperature dependence of the SdH amplitude. Its value agrees well with the values obtained from the k⋅p approximation and infrared cyclotron resonance measurements.
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