Abstract
The dependence of Ga K-edge multiple-scattering extended x-ray absorption fine structure(MS-EXAFS) effects on the nearest neighbours in GaP, GaAs and GaSb semiconductorcompounds with the zinc blende structure has been comprehensively investigated byconsidering the coordination environment within the first three shells around the Ga atoms.It is revealed that in the case of GaP with a light element as the first neighbourof the Ga absorber, the MS-EXAFS effects are negligibly weak with respect tothe single-scattering (SS) contribution. For GaAs and GaSb compounds withheavier elements as the first neighbour of the Ga absorber, the MS effects becomeincreasingly important and are dominated by a triangular double-scattering path DS2(). The EXAFS contribution of the DS2 path destructively interferes with that of thesecond shell single-scattering path (SS2), with the amplitude ratio of DS2 to SS2 risingfrom 7% for GaP to 25 and 70% for GaAs and GaSb, respectively. This indicates that thesecond shell peak magnitude for these compounds is increasingly damped by the MS effectsas the first nearest neighbour goes from P to Sb. Based on these results, we present ageneralized and simplified high-shell MS-EXAFS analysis method for compounds with theopen structure of zinc blende.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
