Abstract
By incorporating a 966 nm infrared laser diode as an optical writing tool, we demonstrated multiple resistance states in memristive device based on vanadium dioxide (VO2) thin film. Before illuminating the device with 966 nm infrared laser pulses, the VO2-based memristive device was thermally biased at ~ 67.0°C. Eight multi-resistance states could be achieved in the fabricated device by seven consecutive laser pulses with 10 ms duration and increasing power. The resistance fluctuation level was within 10.18% of the stabilized resistance and decreased down to less than 1.94% of the stabilized resistance 5 s after the laser illumination.
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