Abstract
We have studied stress relaxation mechanisms in epitaxial (001) SrTiO3 films grown on (001) LaAlO3 substrates with SrRuO3 buffer layers. A theoretical analysis has been undertaken to understand the variation of the lattice parameters of SrTiO3 epitaxial films, taking into account stress relaxation due to the formation of an orthorhombic polydomain structure in the SrRuO3 buffer layer as well as the formation of misfit dislocations at the LaAlO3/SrRuO3 and the SrTiO3/SrRuO3 interfaces. There exists a critical SrRuO3 buffer layer thickness, above which the SrRuO3 buffer layer can “screen” the effect of the LaAlO3 substrate. It is shown that the internal stress level in films can be controlled using buffer layers that exhibit a structural phase transformation.
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