Abstract
Donovan and Medcalf formulated the theory of the free-carrier Faraday effect in semiconductors for a vacuum–medium–vacuum, taking into account multiple internal reflections of the electromagnetic radiation in the medium. Here, we generalize Donovan and Medcalf's results to the case of three distinct media and also extend their analysis in the sense of obtaining a unique decomposition of the multiple pass rotation [Formula: see text] which gives added physical insight into the various contributions to [Formula: see text]. The multiple pass ellipticity Δ is similarly treated. We also present an alternate and simpler method of carrying out the calculations.
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