Abstract
Multiple-quantum nuclear-magnetic-resonance techniques are used to study the distribution of hydrogen in hydrogenated amorphous silicon. Using the fact that multiple-quantum excitation is limited by the size of the dipolar-coupled spin system, we show that the predominant bonding environment for hydrogen is a cluster of four to seven atoms. For device-quality films, the concentration of these cluster defects increases with increasing hydrogen content. At very high hydrogen content, the clusters are replaced with a continuous network of silicon-hydrogen bonds.
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