Multiple microwave resonance interaction in silicon single-electron transistors

Abstract

Silicon single-electron transistors are promising nanodevices for implementation of quantum logic gates. Single frequency continuous wave microwave spectroscopy, carried out under cryogenic conditions on dc biased degenerately doped transistors have previously shown many high quality factor resonances in the drain current modulation, indicating the presence of long-lived excitations. However, such measurements are unable to indicate coupled behaviour between the systems undergoing resonance. Coupled behaviour is a necessary precursor for quantum gate operation. In this work, we investigate the response of devices to two frequency continuous wave microwave spectroscopy, which is a potential method for induced coupling.