Abstract
With the increase of research interest on memristors, various single or multiple memristor configurations have been integrated with advanced complementary metal-oxide-semiconducor technology, which promises efficient implementations of synaptic connections in neuromorphic computing systems, or computing elements in signal processing systems. In this study, multiple memristors, both in series and parallel connections, and their characteristics are further studied including the transient behaviours when asynchronous change happens and the composite electric properties in steady state etc. Particularly, the specific conditions to reach steady state and produce composite memristive effects are presented in detail. Furthermore, several synaptic memristor circuits based on series and parallel connections are also discussed.
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