Abstract
The basic intention of this work is to determine the optimum values of the system parameters of GaAs quantum wells under hot electron condition. The energy loss to LO phonons and the momentum loss through the interaction with LO phonons, deformation acoustic phonons and ionized impurities are incorporated in the calculations. The small-signal ac mobility is calculated on the basis of a heated drifted Fermi–Dirac distribution function for getting the desired ac mobility at a particular dc biasing field. The parameter optimization is done by employing the genetic algorithms to get the desired small-signal ac mobility. This will make feasible the fabrication of a variety of new quantum devices with desired properties.
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