Abstract
In successive implantations of p- and∕or n-dopants, the implantation sequence may affect the ion range distributions. This is demonstrated for two consecutive implantations into the [001] channel direction: (i) 35keV B followed by 50keV As and (ii) 50keV As followed by 35keV B. The defects formed in the first implantation cause enhanced dechanneling of the subsequently implanted ions and, therefore, influence the shape of the range distributions in the second implantation step. The experimental range profiles can be reproduced very well by atomistic computer simulations that take into account damage accumulation or dynamic annealing during a single implantation step as well as the influence of the defects formed by the preceding implantation steps.
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