Abstract
Semiconductor photodetectors at1550nm wavelengths have been widely used in free space optical communications, sensing, infrared imaging, and quantum information processing. These detectors require high sensitivity with high detection efficiency and a large dynamic range. But for fundamental material and device limits, all these performances cannot be achieved in a single device under the same operating conditions. To overcome this bottleneck, we integrate three coupled gain mechanisms in a single element device, operating below breakdown to obtain a high net gain and at the same time utilize the negative feedback mechanism to minimize the gain fluctuation. This results in an improved signal to noise ratio, which is the key to obtaining a superior sensitivity. Integration of gain mechanisms in an InP-InGaAs device was analytically modeled and experimentally demonstrated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
