Multiple-Cell Upsets Induced by Single High-Energy Electrons

Abstract

Multiple-cell upsets (MCUs) in static random access memory-based field-programmable gate arrays from three different technology nodes are recorded from single-particle interactions with 20–52 MeV electrons. Indirect ionization events associated with an electronuclear reaction are shown to be the cause of the MCUs. As has been observed with other ionizing particles such as heavy ions and neutrons, the electron upset cross section per bit is shown to decrease with smaller technology nodes, but the prevalence of electron-induced MCUs increases with scaling.