Abstract

Terahertz (THz) detectors have shown attractive prospects in the areas of THz sensing and imaging. This paper presents the multi-physics modeling of an on-chip octagonal ring antenna loaded with a polysilicon resistor coupled with a sensitive proportional to absolute temperature (PTAT) sensor using a 55 nm CMOS process, leading to an uncooled monolithic resonant CMOS fully integrated THz thermal detector. The theoretical analysis, multi-physics modeling, and experimental verification of the detector are presented in detail. The maximum responsivity is 38.04 V/W with a noise equivalent power (NEP) of 2.89 μW/Hz0.5 at 2.58 THz for the THz source and an existing atmospheric window, and it has the natural scalability to focal plane arrays, showing great potentials for uncooled, compact, low-cost, easy- integration, and mass-production THz detection systems.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.