Multiphysics Coupling Simulation of Silicon Nitride CVD Using an RLSA Source

Abstract

AbstractThe plasma produced by a radial line slot antenna (RLSA) source is discussed based on a simulation using a multiphysics coupled 2D fluid model. The technological aspects in a silicon nitride chemical vapor deposition (CVD) process using a disilane and ammonia mixture are addressed. The model includes the incompressible Navier–Stokes module (INSM), the multiple convection and diffusion transport modules (CDTM), the convection and conduction heat transport (CCHT) for gas and electron temperature, and the transverse electromagnetic (TEM) wave propagation for a planar microwave source structure coupled to the plasma. The dominant precursors, deposition rate and mechanisms, and performance of the CVD process in terms of the film properties are investigated. The ionic and radical component 2D distributions are calculated and the simulation results are correlated with experimental data. The significant impact of the surface reactions with the involvement of H, NH, and NxHy radicals and ions is established.