Multiphoton mechanism of generation of elementary excitations in disperse SiO 2

Abstract

The generation of elementary electron excitations in small particles of SiO 2 under intensive infrared excitation ( λ exc = 1064 nm, F exc = 10 5 −2 × 10 8 W/cm 2, τ p = 20 ns) was examined. The analysis of these processes was based on the investigations of spectral-luminescence properties under multiphoton excitation of a dispersion of small particles of SiO 2. It was determined that the generation mechanisms of elementary electron excitations in such samples of SiO 2 are the photoionization process under multiphoton charge modification of defect centers and the generation of relaxed excitons in non-disturbed silica.