Multiphoton Absorption in Gallium Nitride and Silicon Carbide Photodiodes: Applications for Single-Event Effects Tests

Abstract

We report on the investigation of multiphoton absorption processes in gallium nitride and silicon carbide photodiodes. Up to three-photon absorption mechanisms were evidenced on both materials, thanks to a wavelength-tunable femtosecond laser chain. These results are applied to single event effect investigations on a commercial gallium nitride high electron mobility transistor. We could trigger single event transients by focusing the beam throughout the silicon substrate and collect charge that was photogenerated in the gallium nitride layer by a three-photon absorption process.