Abstract
We report on the investigation of multiphoton absorption processes in gallium nitride and silicon carbide photodiodes. Up to three-photon absorption mechanisms were evidenced on both materials, thanks to a wavelength-tunable femtosecond laser chain. These results are applied to single event effect investigations on a commercial gallium nitride high electron mobility transistor. We could trigger single event transients by focusing the beam throughout the silicon substrate and collect charge that was photogenerated in the gallium nitride layer by a three-photon absorption process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
