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Abstract
Recently Henry and Lang (see Phys. Rev. B, vol.15, p.989 (1977) have considered multiphonon processes in a simple model of a semiconductor defect centre in which the electron-centre interaction is represented by a square well potential with a depth modulated by lattice vibrations. This paper describes a new approach to multiphonon processes in the model. The method relies on matching internal and external solutions of the Schrodinger equation at the well boundary rather than using the adiabatic approximation. Electron emission is described in terms of decaying quasistationary states.
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