Abstract
A high density of microvoids could cause inhomogeneous distribution of deep localized states in amorphous germanium. The electronic transport in such media is no longer dominated by Mott variable-range hopping. The dc conductivity is proportional to ${T}^{n}$ with n\ensuremath{\simeq}6, suggesting that the transport is by a multiphonon process with weak electron-lattice coupling. The ac conductivity is explained by the Scher-Lax continuous-time random-walk approximation, producing information on the hopping rate.
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