Multipeak Emissions and Electrical Properties of ZnO/Si Heterojunctions Based on ZnO Nanoflakes by Spin Coating Technique

Ya Jun Ma,Peng Fei Ji,Yue Li Song,Yong Li,Marco Rossi

doi:10.1155/2021/9267962

Abstract

ZnO/Si heterojunctions have been fabricated by spinning ZnO nanoflakes on the p-type single crystal silicon by using the spin coating technique. Photoluminescence spectra of as-grown and annealed ZnO/Si heterojunctions have been recorded under the excitation of 336 nm. Multipeaks between ∼360 nm and ∼430 nm from annealed ZnO/Si heterojunctions have been analyzed, the origins of which have been ascribed to the effects of one or multiple LO phonons. The rectifying effects can be observed from the prototypical devices based on ZnO/Si heterojunctions. Although the parameters obtained by analyzing the current density-voltage characteristics are away from those from the ideal device, it is believed that ZnO/Si heterojunctions in the present work will be a potential candidate in the optoelectronic field through modulating and optimizing the fabrication conditions.

Highlights

As an important functional oxide semiconductor, nanostructured ZnO has offered an interesting prospect in the fields of optoelectronic devices by manipulating the morphology, doping, and structural composition [1,2,3,4,5,6]
Another way to improve device performance is to fabricate highquality ZnO to construct the high efficiency optoelectronic devices. e pulsed laser deposition and metal organic chemical vapor deposition have been applied, which are expensive and carried out in the high vacuum atmosphere [15]. e spin coating technique is a simple method, which is characterized with many benefits, for example, cost effectiveness, absence of vacuum, and ease of fabrication of large area film on simple or complex substrates [16, 17]
ZnO/Si heterojunctions have been fabricated through the spin coating technique

Summary

Introduction

As an important functional oxide semiconductor, nanostructured ZnO has offered an interesting prospect in the fields of optoelectronic devices by manipulating the morphology, doping, and structural composition [1,2,3,4,5,6]. In the perovskite solar cells, ZnO has been used as an alternative to TiO2 for its high efficiency [7]. Solar cells based on ZnO/Si heterojunctions have been researched extensively by many groups, and some exciting results have been obtained [8,9,10]. In the study of light emitting diodes, Fang’s research group has incorporated HfO2 into the heterojunction interface to improve the light emission of ZnO/Si heterojunctions [12,13,14]. Another way to improve device performance is to fabricate highquality ZnO to construct the high efficiency optoelectronic devices. Another way to improve device performance is to fabricate highquality ZnO to construct the high efficiency optoelectronic devices. e pulsed laser deposition and metal organic chemical vapor deposition have been applied, which are expensive and carried out in the high vacuum atmosphere [15]. e spin coating technique is a simple method, which is characterized with many benefits, for example, cost effectiveness, absence of vacuum, and ease of fabrication of large area film on simple or complex substrates [16, 17]

Methods

Results

Conclusion