Abstract
A crucial task in designing semiconductor devices is to provide a doping profile that assures specific electrical properties. This research work is focused in redesigning doping profiles of semiconductor devices in order to obtain an increased output current; however, large doping levels can degenerate the devices and hence a trade-off between doping profile deviation and output current should be found. The doping profile optimization in semiconductor has been tackled as a multi-objective optimization problem using the Non-dominated Sorting Genetic Algorithm (NSGA-II). We focus on silicon diodes and MOSFET devices; firstly, we redesign the doping profile of diodes in order to obtain a trade-off between doping profile deviation and output current. Secondly, we find a trade-off between current and temperature for a MOSFET device. The experimental results confirm the effectiveness of the proposed approach to face this class of problems in electronic design automation.
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