Abstract
Halide perovskite/crystalline silicon (c-Si) tandem solar cells promise power conversion efficiencies beyond the limits of single-junction cells. However, the local light-matter interactions of the perovskite material embedded in this pyramidal multijunction configuration, and the effect on device performance, are not well understood. Here, we characterize the microscale optoelectronic properties of the perovskite semiconductor deposited on different c-Si texturing schemes. We find a strong spatial and spectral dependence of the photoluminescence (PL) on the geometrical surface constructs, which dominates the underlying grain-to-grain PL variation found in halide perovskite films. The PL response is dependent upon the texturing design, with larger pyramids inducing distinct PL spectra for valleys and pyramids, an effect which is mitigated with small pyramids. Further, optimized quasi-Fermi level splittings and PL quantum efficiencies occur when the c-Si large pyramids have had a secondary smoothing etch. Our results suggest that a holistic optimization of the texturing is required to maximize light in- and out-coupling of both absorber layers and there is a fine balance between the optimal geometrical configuration and optoelectronic performance that will guide future device designs.
Highlights
Halide perovskite/crystalline silicon (c-Si) tandem solar cells promise power conversion efficiencies beyond the limits of single-junction cells
The nascent halide perovskite material class still faces a number of challenges, such as various performance heterogeneities[5−7] arising from local defect distributions,[8−10] and long-term stability issues,[11] they have reached power conversion efficiencies (η) exceeding 25% in a single-junction solar cell with promising stability.[12,13]
In large (5 μm pyramids) texture schemes, the majority of the spatial intensity and spectral PL heterogeneities can be attributed to increased photon trapping within the pyramid valleys from the optical texturing, which provides a dominant contribution to the emission over any underlying intrinsic perovskite grain-to-grain PL heterogeneity
Summary
Tennyson − Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K.; orcid.org/ 0000-0003-0071-8445. Drake − Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K. Florent Sahli − École Polytechnique Fédérale de Lausanne, Photovoltaics and Thin-Film Electronics Laboratory, Neuchatel 2002, CH, Switzerland; orcid.org/0000-00033772-5948. Terry Chien-Jen Yang − École Polytechnique Fédérale de Lausanne, Photovoltaics and Thin-Film Electronics Laboratory, Neuchatel 2002, CH, Switzerland. Fan Fu − École Polytechnique Fédérale de Lausanne, Photovoltaics and Thin-Film Electronics Laboratory, Neuchatel 2002, CH, Switzerland; orcid.org/0000-00023647-4086. Jérémie Werner − École Polytechnique Fédérale de Lausanne, Photovoltaics and Thin-Film Electronics Laboratory, Neuchatel 2002, CH, Switzerland. Bowman − Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K.; orcid.org/00000002-1726-3064. S. Doherty − Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, U.K. Quentin Jeangros − École Polytechnique Fédérale de Lausanne, Photovoltaics and Thin-Film Electronics Laboratory, Neuchatel 2002, CH, Switzerland; orcid.org/ 0000-0003-2885-975X.
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