Multilevel Thermally Assisted Magnetoresistive Random-Access Memory Based on Exchange-Biased Vortex Configurations

Abstract

As feature size of electronics decreases below 20 nm, magnetoresistive random-access memory (MRAM) is a promising successor to DRAM technology, offering good downsize scalability, functionally infinite endurance, and invulnerability against ionizing radiation ($e.g.$ in space). The authors discuss a stacked thermally assisted MRAM, in which information is encoded via two degrees of freedom in the position of a magnetic vortex's core. This yields high-density memory with at least five bits per cell.