Multilevel Spin-Orbit Torque MRAMs

Abstract

In this paper, we present two multilevel spin-orbit torque magnetic random access memories (SOT-MRAMs). A single-level SOT-MRAM employs a three-terminal SOT device as a storage element with enhanced endurance, close-to-zero read disturbance, and low write energy. However, the three-terminal device requires the use of two access transistors per cell. To improve the integration density, we propose two multilevel cells (MLCs): 1) series SOT MLC and 2) parallel SOT MLC, both of which store two bits per memory cell. A detailed analysis of the bit-cell suggests that the S-MLC is promising for applications requiring both high density and low write-error rate, and P-MLC is particularly suitable for high-density and low-write-energy applications. We also performed iso-bit-cell area comparison of our MLC designs with previously proposed MLCs that are based on spin-transfer torque MRAM and show 3– $16\times $ improvement in write energy.