Abstract

Al/CeOx/Pt based resistive random access memory (RRAM) devices were fabricated and investigated. The CeOx RRAM devices show self-compliance set switching without a requirement of high voltage electric forming process. Multilevel set and reset switching processes were observed in the CeOx RRAM devices. Based on the unique distribution characteristic of oxygen vacancies in CeOx films, the possible mechanism of multilevel resistive switching (RS) in the CeOx RRAM Devices was discussed.

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