Abstract
Epitaxial PbTiO3 films with a smooth and dense surface were fabricated by a promising hydrothermal synthesis on an Nb:SrTiO3(100) substrate. The resulting coated substrate was used to fabricate a Pt/PbTiO3/Nb:SrTiO3 heterostructure device. The device exhibited a multilevel storage capacity with an appropriate ROFF/RON ratio and excellent endurance and retention. An electric conduction analysis indicated that the resistive switching behavior of the device was attributed to the trap controlled space-charge-limited current conduction that was caused by the oxygen vacancies in the PbTiO3 hydrothermal films. The modulation of the Pt/PbTiO3 Schottky-like junction depletion under an applied electric field is thought to be responsible for the resistive switching behavior of the device in the carrier injection-trapped/detrapped process.
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