Abstract
The multilevel nature and plasticity of memristor structures based on bismuth selenide microcrystals (of the “flake” type), which are controlled by the rewriting voltages Vset / Vreset are investigated. It was shown by numerical simulation that the switching is caused by the barrier properties of the defective layer, consisting of two sublayers having different thicknesses, as well as different electrical and thermal conductivities, overheating phenomena have been also taken into account. The change in the device resistance both at ON-OFF and at OFF-ON transitions begins at approximately the same absolute value of the threshold electric field of the order of 105 V/cm. Modulation of the barrier formed at the interface between a metal and a strongly doped semiconductor is the most likely model for resistive switching in bismuth selenide-based structures.
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