Abstract
Group‐10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self‐powered photodetector is developed with broadband response ranging from deep ultraviolet to near‐infrared by combining FA1− xCsxPbI3 perovskite with PdSe2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as‐assembled PdSe2/perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at ≈800 nm. The device also shows a large on/off ratio of ≈104, a high responsivity (R) of 313 mA W−1, a decent specific detectivity (D*) of ≈1013 Jones, and a rapid response speed of 3.5/4 µs. These figures of merit are comparable with or much better than most of the previously reported perovskite detectors. In addition, the PdSe2/perovskite device exhibits obvious sensitivity to polarized light, with a polarization sensitivity of 6.04. Finally, the PdSe2/perovskite detector can readily record five “P,” “O,” “L,” “Y,” and “U” images sequentially produced by 808 nm. These results suggest that the present PdSe2/perovskite Schottky junction photodetectors may be useful for assembly of optoelectronic system applications in near future.
Highlights
CH3NH3PbI3 microwire arrays through facile blade coating approach
Enlightened by the above works, we developed a high-performance Schottky junction photodetector by combining Cs-doped FAPbI3 perovskite with multilayer PdSe2, a newly explored 2D layered group-10 TMDs, which has been widely applied in solar cells, field-effect transistors, and photodiodes.[30,31,32]
The large-area, continuous, and high-quality multilayer 2D PdSe2 films were synthesized on a SiO2/Si substrate (300 nm SiO2 thickness) via a simple selenization method,[36] and the Cs-doped FAPbI3 perovskite layer as the light absorption medium was drop casted by spin-coating method (More details about the synthesis of PdSe2, perovskite, and the device fabrication are provided in the Experimental Section)
Summary
CH3NH3PbI3 microwire arrays through facile blade coating approach. The resulting micro-photodetectors showed broadband sensitivity with peak responsivity. Under 808 nm light illumination, the device achieves impressive device performance in terms of a large on/off ratio of ≈104, a high responsivity (R) of 313 mA W−1, a decent specific detectivity (D*) of ≈1013 Jones, a high polarization sensitivity of 6.04, as well as a fast response speed of 3.5/4 μs. These results suggest that the present device may find potential application in future optoelectronic devices and systems
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