Abstract
The modification of multispin casting multilayered barium titanate (BTO) thin films on indium tin oxide (ITO)/glass substrate without doping other elements is adopted to improve the memory performance. The X-ray photoelectron spectroscopy analysis reveals the concentration of oxygen vacancies can be reduced by the increasing number of the BTO layer. Mechanisms of conducting paths relating to the concentration of oxygen vacancies will also be explicated. The memory devices showed typical bipolar resistive switching behavior and an ON/OFF ratio of over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> . The memory devices also exhibited outstanding uniformity. A retention time of over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> s without fluctuation at room temperature and 85 °C can be achieved.
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