Multilayer planar structures prepared from chalcogenide thin films of As–Se and Ge–Se systems and polymer thin films using thermal evaporation and spin-coating techniques

Abstract

We report the preparation of multilayers based on polyamide–imide polymer and As–Se or Ge–Se chalcogenide thin films. Chalcogenide films of As–Se and Ge–Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide–imide films. Fifteen layers of PAI+As–Se system and nineteen layers of PAI+Ge–Se system were coated. Optical properties of prepared multilayers have been established using UV–vis–NIR and Ellipsometric spectroscopy. Both, PAI+As–Se and PAI+Ge–Se multilayer systems, exhibited the high-reflection bands centered around 830nm and 1350nm, respectively. The shift of the band position of PAI+Ge–Se multilayers to lower energies was caused by higher thickness of Ge–Se films. The bandwidth of reflection band of 8 PAI+7 As–Se multilayer was ∼90nm while bandwidth of PAI+Ge–Se system decreased to ∼70nm because Ge–Se films have 0.1 lower refractive index against As–Se films. Design of 1D-photonic crystals based on alternating chalcogenide and polymer films is a new opportunity for application of chalcogenide thin films as optical materials for near-infrared region.