Abstract
AbstractA multilayer monolithic microwave integrated circuit (MMIC) directional coupler is proposed in which the characteristics of the multilayer MMIC structure constructed with conductors and dielectric films on a GaAs wafer surface are used effectively. In the proposed directional coupler, a tight coupling of 3 dB can be realized with low loss and in a small area. It is highly flexible in design. Also, it is shown in this paper that by means of the proposed multilayer directional coupler, a millimeter‐wave variable attenuator, a balanced modulator, and an endless phase shifter can be realized. These structures play important roles as millimeter‐wave amplitude/phase control circuits. Hence, it is significant to accomplish miniaturization and MMIC realization.The multilayer directional coupler designed and fabricated in the 40‐GHz band exhibited a circuit area of 0.45 mm2 and coupling losses of 4.0 ± 0.2 dB. The designed and measured values agree well. Further, the amplitude/phase control circuits were designed and also exhibited a good performance.
Published Version
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