Abstract
A new, multilayer metallization system has been developed for the purpose of fabricating a planar interconnect structure. This system comprises two levels of metal interconnection, and the first‐level metal layer is buried in a low temperature CVD film pyrolytically deposited by at 420°C. The metal chosen for both layers is aluminum, and the insulator is phosphosilicate glass. In the metal processing, a self‐aligned photolithographic technique is applied in which positive photoresist AZ‐1350 plays an important role in forming the first‐level Al layer and the film.
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